Modeling the temperature dependence of the vibrational redistribution of energy with its own electromagnetic radiation in electronic circuits on MOS transistors

This work presents a model of the temperature dependence of the vibrational redistribution of energy with its own electromagnetic radiation in electronic circuits on MOS transistors. The work was carried out in a new area of technical diagnostics - radiosensory technical diagnostics and authentication, based on the registration of the electrical component of the near field of electro-magnetic radiation induced by the electronic unit itself. In the ISIS circuit simulation program of the Proteus 8 Professional package, using PSpice component models, a key element model is built, based on the methods of nodal potentials, loop currents and the solution of quadratic equations. The calculated parameters of the model were used to obtain numerical signal radio profiles of the electrical component of electromagnetic radiation and their temperature depend-ences. The relationship between the decay time of oscillations and temperature is shown in the form of a simple analytical expression. An experiment was prepared and carried out to deter-mine the temperature of the key node using the presented model. A correlation assessment of the reproducibility of signal radio profiles obtained as a result of modeling and during the exper-iment was carried out. It was found that their mutual correlation is not lower than 0.93, and the error in determining the decay time is not more than 10%, which indicates the correctness of the presented study. A conclusion is made and the possibility of using the results obtained in radio-sensor technical diagnostics is shown when determining the temperature of an electronic unit or for leveling the temperature drift of the signal radio profile.

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